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Chemical doping is a key process for controlling the electronic properties of molecular semiconductors, including their conductivity and work function. A common limitation of n-doped polymers is their instability under ambient conditions, which has imposed restrictions on the characterisation and device application of n-doped polymers. In this study, sequential n-doping with organometallic dopants was performed on thin films of polymeric semiconductors with naphthalene diimide and perylene diimide-based backbones. Moderate ambient stability was achieved with (RuCp*Mes) 2 , {Cp* = pentamethylcyclopentadienyl; Mes = 1,3,5-trimethylbenzene}, which is in striking contrast to the unstable, n-doped state obtained with cobaltocene, a simple one-electron reductant. The highly cathodic, effective redox potential of (RuCp*Mes) 2 , ca. −2.0 V vs. ferrocene, suppresses the back electron transfer reaction and the subsequent dopant loss in air, which gives rise to the observed air stability. It also allows a perylene diimide-based polymer to be reduced to a state in which the repeat units are largely dianionic. Photoelectron measurements show that the ionization potential of the heavily doped polymer is ca. 3.9 eV. Our findings show that chemical doping with (RuCp*Mes) 2 is an effective method to produce highly stable, n-doped conjugated polymers. 

Abstract Utilizing the intrinsic mobility–strain relationship in semiconductors is critical for enabling strain engineering applications in high‐performance flexible electronics. Here, measurements of Hall effect and Raman spectra of an organic semiconductor as a function of uniaxial mechanical strain are reported. This study reveals a very strong, anisotropic, and reversible modulation of the intrinsic (trap‐free) charge carrier mobility of single‐crystal rubrene transistors with strain, showing that the effective mobility of organic circuits can be enhanced by up to 100% with only 1% of compressive strain. Consistently, Raman spectroscopy reveals a systematic shift of the low‐frequency Raman modes of rubrene to higher (lower) frequencies with compressive (tensile) strain, which is indicative of a reduction (enhancement) of thermal molecular disorder in the crystal with strain. This study lays the foundation of the strain engineering in organic electronics and advances the knowledge of the relationship between the carrier mobility, low‐frequency vibrational modes, strain, and molecular disorder in organic semiconductors.